Производитель: ON Semiconductor  •  Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 3.2A  •  Input Capacitance (Ciss) @ Vds: 200pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.25W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3