Характеристики | Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V • Drain to Source Voltage (Vdss): 20V • Gate Charge (Qg) @ Vgs: 1.2nC @ 4V • Current - Continuous Drain (Id) @ 25° C: 330mA • Input Capacitance (Ciss) @ Vds: 43pF @ 10V • FET Polarity: P-Channel • FET Feature: Logic Level Gate • Power - Max: 150mW • Mounting Type: Surface Mount |
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