Производитель: STMicroelectronics  •  Вредные вещества: RoHS   Без свинца  •  Серия: STripFET™  •  Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 160nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 160A  •  Input Capacitance (Ciss) @ Vds: 5350pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 210W  •  Mounting Type: Surface Mount  •  Package / Case: PowerSO-10 Exposed Bottom Pad