Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Серия: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 300nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 110A  •  Input Capacitance (Ciss) @ Vds: 12900pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.75W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Встречается под наим.: SUM110N06-3M4L-E3DKR