Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 24 mOhm @ 3A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 17nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 1400pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 700mW  •  Mounting Type: Surface Mount  •  Package / Case: 2-3T1A  •  Встречается под наим.: TPC6004(TE85L,F,M)-ND