Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 75 mOhm @ 1.9A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 4.4nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3.9A  •  Input Capacitance (Ciss) @ Vds: 251pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 700mW  •  Mounting Type: Surface Mount  •  Package / Case: 2-3T1A