Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 34nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 30A • Input Capacitance (Ciss) @ Vds: 2846pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 45W • Mounting Type: Surface Mount • Package / Case: 2-5Q1A |