Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 6nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 2.7A  •  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  •  FET Polarity: P-Channel  •  FET Feature: Diode (Isolated)  •  Power - Max: 1.35W  •  Mounting Type: Surface Mount  •  Встречается под наим.: TPCF8B01FDKR