Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Toshiba • Вредные вещества: RoHS Без свинца • Rds On (Max) @ Id, Vgs: 580 mOhm @ 800mA, 10V • Drain to Source Voltage (Vdss): 250V • Gate Charge (Qg) @ Vgs: 10nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 1.7A • Input Capacitance (Ciss) @ Vds: 600pF @ 10V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 600mW • Mounting Type: Surface Mount • Package / Case: 2-3R1F |
Архив документации | ![Скрыть](/static/search/close.gif) |
Поставщики «TPCS8008-H(TE12LQ» | |
|