Характеристики | Производитель: Microsemi-PPG • Вредные вещества: RoHS Без свинца • Серия: POWER MOS V® • Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V • Drain to Source Voltage (Vdss): 500V • Gate Charge (Qg) @ Vgs: 560nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 63A • Input Capacitance (Ciss) @ Vds: 10600pF @ 25V • FET Polarity: N-Channel • FET Feature: Standard • Power - Max: 568W • Mounting Type: Chassis Mount • Package / Case: SOT-227 |