Производитель: Fairchild Semiconductor  •  Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA,10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 1.43nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 180mA  •  Input Capacitance (Ciss) @ Vds: 60pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 800mW  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Standard Body), TO-226