Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/on/5150.gif) Производитель: ON Semiconductor • Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.9A, 4.5V • Drain to Source Voltage (Vdss): 20V • Gate Charge (Qg) @ Vgs: 32nC @ 4.5V • Current - Continuous Drain (Id) @ 25° C: 6.9A • Input Capacitance (Ciss) @ Vds: 3200pF @ 10V • FET Polarity: P-Channel • FET Feature: Logic Level Gate • Power - Max: 1.38W • Mounting Type: Surface Mount • Package / Case: 8-SOIC (3.9mm Width) • Встречается под наим.: NTMS4101PR2OS |
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