Характеристики | Производитель: ON Semiconductor • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 92nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 75A • Input Capacitance (Ciss) @ Vds: 4370pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 2.4W • Mounting Type: Through Hole • Package / Case: TO-220-3 (Straight Leads) • Встречается под наим.: NTP75N06LOS |