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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
2SJ380(F) | Toshiba | MOSFET P-CH 60V 12A TO-220NIS Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2601(F) | Toshiba | MOSFET N-CH 500V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3868(Q,M) | Toshiba | MOSFET N-CH 500V 5A SC-67 Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCS8102(TE12L) | Toshiba | MOSFET P-CH 20V 6A 8-TSSOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 37nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 2740pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | Доп. информация Искать в поставщиках | ||
2SJ338(TE16R1,NQ) | Toshiba | MOSFET P-CH 180V 1A PW-MOLD Drain to Source Voltage (Vdss): 180V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 210pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3132 | Toshiba | MOSFET N-CH 500V 50A TO-3P(L) Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 11000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | Доп. информация Искать в поставщиках | ||
TPC6111(TE85L,F) | Toshiba | MOSFET P-CH -20V -5.5A VS-6 Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 5.5A · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: VS-6 (SOT-23-6) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2841 | Toshiba | MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SK3797(Q,M) | Toshiba | MOSFET N-CH 600V 13A SC-67 Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2968 | Toshiba | MOSFET N-CH 900V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SJ412(SM,Q) | Toshiba | MOSFET P-CH 100V 16A TO-220SM Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8006-H(TE12L,Q | Toshiba | MOSFET N-CH 100V 18A 8-SOPA Rds On (Max) @ Id, Vgs: 67 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 780pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 8-SOPA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3903(F) | Toshiba | MOSFET N-CH 600V 14A SC-65 Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3760(Q,M) | Toshiba | MOSFET N-CH 600V 3.5A TO-220AB Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 | Доп. информация Искать в поставщиках | |
TPCF8B01(TE85L,F,M | Toshiba | MOSFET P-CH SBD 20V 2.7A 2-3U1C Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.35W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
TPC8109(TE12L) | Toshiba | MOSFET P-CH 30V 10A 8-SOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2260pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | ||
2SK2847 | Toshiba | MOSFET N-CH 900V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B | Доп. информация Искать в поставщиках | ||
2SK2962(F) | Toshiba | MOSFET N-CH 100V 1A TO-92 Rds On (Max) @ Id, Vgs: 700 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole | от 0,00 | Доп. информация Искать в поставщиках | |
TPC6004(TE85L,F,M) | Toshiba | MOSFET N-CH 20V 6A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK1542 | Toshiba | MOSFET N-CH 60V 45A TO-220AB Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 400nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
SSM3J36FS(T5L,F,T) | Toshiba | MOSFET P-CHANNEL 20V SSM Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 330mA · Input Capacitance (Ciss) @ Vds: 43pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2777(SM,Q) | Toshiba | MOSFET N-CH 600V 6A TO-220 Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SJ349(F,T) | Toshiba | MOSFET P-CH 60V 20A TO-3 Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2800pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCM8002-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 30A 8-TSSOP ADV Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2846pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3742(Q) | Toshiba | MOSFET N-CH 900V 5A TO-220SIS Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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