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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
2SK2961(F,M) | Toshiba | MOSFET N-CH 60V 2A TO-92 Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 170pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Long Body), TO-226 | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3763(Q,M) | Toshiba | MOSFET N-CH 900V 3A TO-220AB Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 69W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SJ681(Q) | Toshiba | MOSFET P-CH 60V 5A PW-MOLD Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 700pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Through Hole | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2700(T) | Toshiba | MOSFET N-CH 900V 3A 2-10R1B Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10R1B | Доп. информация Искать в поставщиках | ||
2SK3758(M) | Toshiba | MOSFET N-CH 500V 5A TO-220AB Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 58W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SK1382(Q) | Toshiba | MOSFET N-CH 100V 60A TO-3PL Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | от 0,00 | Доп. информация Искать в поставщиках | |
TK15A60U(Q) | Toshiba | MOSFET N-CH 600V 15A TO-220SIS Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 950pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2916 | Toshiba | MOSFET N-CH 500V 14A 2-16F1B Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: 2-16F1B | Доп. информация Искать в поставщиках | ||
TPC6005(TE85L,F,M) | Toshiba | MOSFET N-CH 30V 6A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1420pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2968(F,T) | Toshiba | MOSFET N-CH 900V 10A 2-16C1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3565 | Toshiba | MOSFET N-CH 900V 5A TO-220SIS Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | Доп. информация Искать в поставщиках | ||
2SK2201(TE16R) | Toshiba | MOSFET N-CH 100V 3A 2-7B2B Rds On (Max) @ Id, Vgs: 350 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 13.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 280pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | Доп. информация Искать в поставщиках | ||
2SK3265(F,T) | Toshiba | MOSFET N-CH 700V 10A SC-67 Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 700V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPC6007-H(TE85LFM) | Toshiba | MOSFET N-CH 30V 5A VS-6 Rds On (Max) @ Id, Vgs: 54 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 4.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 240pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3763(M) | Toshiba | MOSFET N-CH 900V 3A TO-220AB Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 69W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
2SK3387(TE24L,Q) | Toshiba | MOSFET N-CH 150V 18A SC-97 Rds On (Max) @ Id, Vgs: 120 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
2SJ464(F) | Toshiba | MOSFET P-CH 100V 18A TO-220NIS Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2900pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCF8102(TE85L,F,M | Toshiba | MOSFET P-CH 20V 6A VS8 2-3U1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1550pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3563(Q) | Toshiba | MOSFET N-CH 500V 5A TO-220SIS Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3373(TE16L1,NQ) | Toshiba | MOSFET N-CH 500V 2A 2-7J1B Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2312(F) | Toshiba | MOSFET N-CH 60V 45A 2-10R1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3350pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10R1B | Доп. информация Искать в поставщиках | ||
2SK2603(F) | Toshiba | MOSFET N-CH 800V 3A TO-220AB Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2789(SM,Q) | Toshiba | MOSFET N-CH 100V 27A TO-220SM Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2837 | Toshiba | MOSFET N-CH 500V 20A 2-16C1B Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK4016(Q) | Toshiba | MOSFET N-CH 600V 13A SC-67 Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках |
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