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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT1001R6BFLLG — MOSFET N-CH 1000V 8A TO-247

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS 7®
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs55nC @ 10V
Current - Continuous Drain (Id) @ 25° C8A
Input Capacitance (Ciss) @ Vds1320pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max266W
Mounting TypeThrough Hole
Package / CaseTO-247
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT30M30B2LLGMicrosemi-PPGMOSFET N-CH 300V 100A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT8020JLLMicrosemi-PPGMOSFET N-CH 800V 33A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M16B2FLLGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5014SFLLGMicrosemi-PPGMOSFET N-CH 500V 35A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3261pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M50JFLLMicrosemi-PPGMOSFET N-CH 500V 71A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10035B2FLLGMicrosemi-PPGMOSFET N-CH 1000V 28A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT30M75BLLGMicrosemi-PPGMOSFET N-CH 300V 44A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 3018pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8020B2FLLGMicrosemi-PPGMOSFET N-CH 800V 38A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M16LFLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT30M61BFLLGMicrosemi-PPGMOSFET N-CH 300V 54A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 61 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 64nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 3720pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8020LFLLGMicrosemi-PPGMOSFET N-CH 800V 38A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT12067B2FLLGMicrosemi-PPGMOSFET N-CH 1200V 18A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M11JFLLMicrosemi-PPGMOSFET N-CH 200V 176A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 88A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 176A  ·  Input Capacitance (Ciss) @ Vds: 10320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8020JFLLMicrosemi-PPGMOSFET N-CH 800V 33A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10045B2LLGMicrosemi-PPGMOSFET N-CH 1000V 23A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT6010LLLGMicrosemi-PPGMOSFET N-CH 600V 54A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 6710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5014BLLGMicrosemi-PPGMOSFET N-CH 500V 35A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3261pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT50M75B2LLGMicrosemi-PPGMOSFET N-CH 500V 57A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 28.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 57A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 570W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT1201R4BFLLGMicrosemi-PPGMOSFET N-CH 1200V 9A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6038BFLLGMicrosemi-PPGMOSFET N-CH 600V 17A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 265W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT5510JFLLMicrosemi-PPGMOSFET N-CH 550V 44A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 124nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 5823pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10035JFLLMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT12057B2FLLGMicrosemi-PPGMOSFET N-CH 1200V 22A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M16LLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10026JLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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