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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
APT44F80B2 | Microsemi-PPG | MOSFET N-CH 800V 44A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 240 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 9330pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT66M60L | Microsemi-PPG | MOSFET N-CH 600V 66A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 330nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 66A · Input Capacitance (Ciss) @ Vds: 13190pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT48M80B2 | Microsemi-PPG | MOSFET N-CH 800V 48A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 200 mOhm @ 24A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 9330pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT43M60B2 | Microsemi-PPG | MOSFET N-CH 600V 43A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 215nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 5890pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 780W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT34M60B | Microsemi-PPG | MOSFET N-CH 600V 34A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 165nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 6640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 624W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT38F80L | Microsemi-PPG | MOSFET N-CH 800V 41A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 41A · Input Capacitance (Ciss) @ Vds: 8070pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT28M120L | Microsemi-PPG | MOSFET N-CH 1200V 28A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 9670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT39M60J | Microsemi-PPG | MOSFET N-CH 600V 39A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 130 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 11300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 480W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT58M50J | Microsemi-PPG | MOSFET N-CH 500V 58A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 340nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 58A · Input Capacitance (Ciss) @ Vds: 13500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 540W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT30F50B | Microsemi-PPG | MOSFET N-CH 500V 30A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 4525pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT42F50B | Microsemi-PPG | MOSFET N-CH 500V 42A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 6810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 624W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
APT38M50J | Microsemi-PPG | MOSFET N-CH 500V 38A ISOTOP Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 220nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 8800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 357W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
APT23F60B | Microsemi-PPG | MOSFET N-CH 600V 23A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 310 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4415pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 415W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT7F80K | Microsemi-PPG | MOSFET N-CH 800V 7A TO-220 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1335pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 225W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
APT12M80B | Microsemi-PPG | MOSFET N-CH 800V 12A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 335W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT34F60BG | Microsemi-PPG | MOSFET N-CH 600V 34A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 165nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 6640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 624W · Mounting Type: Through Hole · Package / Case: TO-247 | Доп. информация Искать в поставщиках | ||
APT22F100J | Microsemi-PPG | MOSFET N-CH 1000V 22A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 545W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT19M120J | Microsemi-PPG | MOSFET N-CH 1200V 19A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 9670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 545W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M120B2 | Microsemi-PPG | MOSFET N-CH 1200V 24A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT22F120L | Microsemi-PPG | MOSFET N-CH 1200V 22A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT34F100B2 | Microsemi-PPG | MOSFET N-CH 1000V 34A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M80B | Microsemi-PPG | MOSFET N-CH 800V 24A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 430 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 4595pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT30M60J | Microsemi-PPG | MOSFET N-CH 600V 30A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 215nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5890pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 356W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT9M100B | Microsemi-PPG | MOSFET N-CH 1000V 9A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2605pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 335W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M120L | Microsemi-PPG | MOSFET N-CH 1200V 24A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках |
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