Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
APT34F100B2 | Microsemi-PPG | MOSFET N-CH 1000V 34A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1135W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M80B | Microsemi-PPG | MOSFET N-CH 800V 24A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 430 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 4595pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT30M60J | Microsemi-PPG | MOSFET N-CH 600V 30A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 215nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5890pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 356W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT9M100B | Microsemi-PPG | MOSFET N-CH 1000V 9A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2605pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 335W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M120L | Microsemi-PPG | MOSFET N-CH 1200V 24A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT75M50L | Microsemi-PPG | MOSFET N-CH 500V 75A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 290nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 11600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT21M100J | Microsemi-PPG | MOSFET N-CH 1000V 21A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 8500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 462W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT31M100B2 | Microsemi-PPG | MOSFET N-CH 1000V 31A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 8500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT47M60J | Microsemi-PPG | MOSFET N-CH 600V 47A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 330nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 13190pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 542W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT18M80B | Microsemi-PPG | MOSFET N-CH 800V 18A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 560 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 3760pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 500W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | APT24F50B | Microsemi-PPG | MOSFET N-CH 500V 24A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 3630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 335W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
APT43M60L | Microsemi-PPG | MOSFET N-CH 600V 43A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 215nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 5890pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 780W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT41M80B2 | Microsemi-PPG | MOSFET N-CH 800V 41A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 41A · Input Capacitance (Ciss) @ Vds: 8070pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT25M100J | Microsemi-PPG | MOSFET N-CH 1000V 25A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 545W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT53F80J | Microsemi-PPG | MOSFET N-CH 800V 53A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 130 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 570nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 53A · Input Capacitance (Ciss) @ Vds: 17550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 960W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | APT14M100B | Microsemi-PPG | MOSFET N-CH 1000V 14A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 3965pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 500W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
APT41M80L | Microsemi-PPG | MOSFET N-CH 800V 41A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 41A · Input Capacitance (Ciss) @ Vds: 8070pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT32F120J | Microsemi-PPG | MOSFET N-CH 1200V 32A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 350 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 560nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 18200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 960W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | APT56M60B2 | Microsemi-PPG | MOSFET N-CH 600V 56A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 130 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 56A · Input Capacitance (Ciss) @ Vds: 11300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
APT34F60BG | Microsemi-PPG | MOSFET N-CH 600V 34A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 165nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 6640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 624W · Mounting Type: Through Hole · Package / Case: TO-247 | Доп. информация Искать в поставщиках | ||
APT22F100J | Microsemi-PPG | MOSFET N-CH 1000V 22A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 305nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 9835pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 545W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT19M120J | Microsemi-PPG | MOSFET N-CH 1200V 19A SOT-227 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 560 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 9670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 545W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
APT24M120B2 | Microsemi-PPG | MOSFET N-CH 1200V 24A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 680 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
APT22F120L | Microsemi-PPG | MOSFET N-CH 1200V 22A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 800 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 8370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
APT29F100B2 | Microsemi-PPG | MOSFET N-CH 1000V 29A T-MAX Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 460 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 29A · Input Capacitance (Ciss) @ Vds: 8500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |