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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT6021BFLLG — MOSFET N-CH 600V 29A TO-247

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS 7®
Rds On (Max) @ Id, Vgs210 mOhm @ 14.5A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs80nC @ 10V
Current - Continuous Drain (Id) @ 25° C29A
Input Capacitance (Ciss) @ Vds3470pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max400W
Mounting TypeThrough Hole
Package / CaseTO-247
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT12057B2FLLGMicrosemi-PPGMOSFET N-CH 1200V 22A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M16LLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10026JLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5018SLLGMicrosemi-PPGMOSFET N-CH 500V 27A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2596pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT8024JFLLMicrosemi-PPGMOSFET N-CH 800V 29A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8043SLLGMicrosemi-PPGMOSFET N-CH 800V 20A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 5mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 85nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT8014L2LLGMicrosemi-PPGMOSFET N-CH 800V 52A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 26A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 7238pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5016BLLGMicrosemi-PPGMOSFET N-CH 500V 30A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2833pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10045B2FLLGMicrosemi-PPGMOSFET N-CH 1000V 23A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT60M75L2LLGMicrosemi-PPGMOSFET N-CH 600V 73A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 8930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT5024BFLLGMicrosemi-PPGMOSFET N-CH 500V 22A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 265W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10045JLLMicrosemi-PPGMOSFET N-CH 1000V 21A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10026JFLLMicrosemi-PPGMOSFET N-CH 1000V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6029BFLLGMicrosemi-PPGMOSFET N-CH 600V 21A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 290 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 2615pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M34SLLGMicrosemi-PPGMOSFET N-CH 200V 74A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 74A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT6017JLLMicrosemi-PPGMOSFET N-CH 600V 31A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 375W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5024BLLGMicrosemi-PPGMOSFET N-CH 500V 22A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 265W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10035JLLMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M36SLLGMicrosemi-PPGMOSFET N-CH 200V 65A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 3080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT12067LFLLGMicrosemi-PPGMOSFET N-CH 1200V 18A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 4420pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT30M36JLLMicrosemi-PPGMOSFET N-CH 300V 76A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 6480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10078BFLLGMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M36SFLLGMicrosemi-PPGMOSFET N-CH 200V 65A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 3080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5010B2FLLGMicrosemi-PPGMOSFET N-CH 500V 46A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M20B2LLGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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