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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APTM100DA18T1G — MOSFET N-CH 1000V 40A SP1

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs216 mOhm @ 33A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs570nC @ 10V
Current - Continuous Drain (Id) @ 25° C40A
Input Capacitance (Ciss) @ Vds14800pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max657W
Mounting TypeChassis Mount
Package / CaseSP1 Module
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT12040JVFRMicrosemi-PPGMOSFET N-CH 1200V 26A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 1200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 18000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM120U10DAGMicrosemi-PPGMOSFET N-CH 1200V 116A SP6
Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 1100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 116A  ·  Input Capacitance (Ciss) @ Vds: 28900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3290W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT31M100LAPT31M100LMicrosemi-PPGMOSFET N-CH 1000V 31A TO-264
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 260nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1040W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APTM20SKM05GMicrosemi-PPGMOSFET N-CH 200V 317A SP6
Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 448nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 317A  ·  Input Capacitance (Ciss) @ Vds: 27400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1136W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT8M80KMicrosemi-PPGMOSFET N-CH 800V 8A TO-220
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1335pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 225W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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APTM100UM45DAGMicrosemi-PPGMOSFET N-CH 1000V 215A SP6
Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1602nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 215A  ·  Input Capacitance (Ciss) @ Vds: 42700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT30M85BVFRGMicrosemi-PPGMOSFET N-CH 300V 40A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 4950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6021SLLGMicrosemi-PPGMOSFET N-CH 600V 29A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 3470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5018BFLLGMicrosemi-PPGMOSFET N-CH 500V 27A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 58nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2596pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10040B2VRGMicrosemi-PPGMOSFET N-CH 1000V 25A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APL602B2GMicrosemi-PPGMOSFET N-CH 600V 49A T-MAX
Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V  ·  Drain to Source Voltage (Vdss): 600V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 730W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M11JVFRMicrosemi-PPGMOSFET N-CH 200V 175A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 175A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6025BLLGMicrosemi-PPGMOSFET N-CH 600V 24A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 325W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8052BLLGMicrosemi-PPGMOSFET N-CH 800V 15A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 520 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2035pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT50M50L2LLGMicrosemi-PPGMOSFET N-CH 500V 89A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 44.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 89A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10078SLLGMicrosemi-PPGMOSFET N-CH 1000V 14A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT32M80JMicrosemi-PPGMOSFET N-CH 800V 32A SOT-227
Серия: POWER MOS 8™  ·  Drain to Source Voltage (Vdss): 800V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT14F100BMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 8™  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 3965pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT5014SLLGMicrosemi-PPGMOSFET N-CH 500V 35A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3261pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT8030JVFRMicrosemi-PPGMOSFET N-CH 800V 25A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 510nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM120DA56T1GMicrosemi-PPGMOSFET N-CH 1200V 18A SP1
Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7736pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APT6013B2FLLGMicrosemi-PPGMOSFET N-CH 600V 43A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 5630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5024BVFRGMicrosemi-PPGMOSFET N-CH 500V 22A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 221nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 4320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M34BLLGMicrosemi-PPGMOSFET N-CH 200V 74A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 74A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT60M60JFLLMicrosemi-PPGMOSFET N-CH 600V 70A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 289nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 12630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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