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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APTM100DA18TG — MOSFET N-CH 1000V 43A SP4

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs210 mOhm @ 21.5A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs372nC @ 10V
Current - Continuous Drain (Id) @ 25° C43A
Input Capacitance (Ciss) @ Vds10400pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max780W
Mounting TypeChassis Mount
Package / CaseSP4 Module
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT30M30B2LLGMicrosemi-PPGMOSFET N-CH 300V 100A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7030pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5020BVFRGMicrosemi-PPGMOSFET N-CH 500V 26A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8020JLLMicrosemi-PPGMOSFET N-CH 800V 33A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M16B2FLLGMicrosemi-PPGMOSFET N-CH 200V 100A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 7220pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M11JVRMicrosemi-PPGMOSFET N-CH 200V 175A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 180nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 175A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT42F50BAPT42F50BMicrosemi-PPGMOSFET N-CH 500V 42A TO-247
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 6810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 624W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20N60SC3GMicrosemi-PPGMOSFET N-CH 600V 20.7A D3PAK
Серия: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 114nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20.7A  ·  Input Capacitance (Ciss) @ Vds: 2440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5014SFLLGMicrosemi-PPGMOSFET N-CH 500V 35A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3261pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT8M100BAPT8M100BMicrosemi-PPGMOSFET N-CH 1000V 8A TO-247
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1885pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT30M70BVFRGMicrosemi-PPGMOSFET N-CH 300V 48A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 48A  ·  Input Capacitance (Ciss) @ Vds: 5870pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT10M19SVRGMicrosemi-PPGMOSFET N-CH 100V 75A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT40M35JVFRMicrosemi-PPGMOSFET N-CH 400V 93A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 46.5A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 1065nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 93A  ·  Input Capacitance (Ciss) @ Vds: 20160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5017SVRGMicrosemi-PPGMOSFET N-CH 500V 30A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 5280pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT12080JVFRMicrosemi-PPGMOSFET N-CH 1200V 15A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 485nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 7800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10050B2VFRGMicrosemi-PPGMOSFET N-CH 1000V 21A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 500nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT20M38SVFRGMicrosemi-PPGMOSFET N-CH 200V 67A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M50JFLLMicrosemi-PPGMOSFET N-CH 500V 71A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT1001R6BFLLGMicrosemi-PPGMOSFET N-CH 1000V 8A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 266W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT31N80JC3Microsemi-PPGMOSFET N-CH 800V 31A SOT-227
Серия: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 145 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 355nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT15F50KAPT15F50KMicrosemi-PPGMOSFET N-CH 500V 15A TO-220
Rds On (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 225W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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APT5020SVFRGMicrosemi-PPGMOSFET N-CH 500V 26A D3PAK
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 26A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT10035B2FLLGMicrosemi-PPGMOSFET N-CH 1000V 28A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT30M75BLLGMicrosemi-PPGMOSFET N-CH 300V 44A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 3018pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 329W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8020B2FLLGMicrosemi-PPGMOSFET N-CH 800V 38A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APTM100UM60FAGMicrosemi-PPGMOSFET N-CH 1000V 129A SP6
Rds On (Max) @ Id, Vgs: 70 mOhm @ 64.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 1116nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 129A  ·  Input Capacitance (Ciss) @ Vds: 31100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2272W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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