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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
BSZ088N03MSG | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2100pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BSC123N08NS3 G | Infineon Technologies | MOSFET N-CH 80V 55A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 1870pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
IPD038N04N G | Infineon Technologies | MOSFET N-CH 40V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 4500pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPB080N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 93nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3500pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IPD06N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A TO-252 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2800pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BSO303SPT | Infineon Technologies | MOSFET P-CH 30V 8.9A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.9A · Input Capacitance (Ciss) @ Vds: 1754pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.35W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | Доп. информация Искать в поставщиках | ||
IPD30N03S4L-14 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPS06N03LZ G | Infineon Technologies | MOSFET N-CH 25V 50A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2653pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | Доп. информация Искать в поставщиках | ||
IPP07N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2782pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
IPB100N06S3-04 | Infineon Technologies | MOSFET N-CH 55V 100A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 314nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 14230pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BSC032N03S | Infineon Technologies | MOSFET N-CH 30V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 39nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5080pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 78W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | Доп. информация Искать в поставщиках | ||
IPB114N03L G | Infineon Technologies | MOSFET N-CH 30V 30A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPD80P03P4L-07 | Infineon Technologies | MOSFET P-CH 30V 80A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5700pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
BSC120N03LSG | Infineon Technologies | MOSFET N-CH 30V 39A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 1200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IPI024N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 275nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 23000pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPD50N06S2L-13 | Infineon Technologies | MOSFET N-CH 55V 50A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1800pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPP80N06S2L-H5 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
IPS050N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO251-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BSA223SP | Infineon Technologies | MOSFET P-CH 20V 390MA SC75 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.62nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 390mA · Input Capacitance (Ciss) @ Vds: 56pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-75 | Доп. информация Искать в поставщиках | ||
IPB05N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3209pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IPD034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11000pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPA100N08N3 G | Infineon Technologies | MOSFET N-CH 80V 40A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2410pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220FP | от 0,00 | Доп. информация Искать в поставщиках | |
IPP16CN10L G | Infineon Technologies | MOSFET N-CH 100V 54A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 4190pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
IPP13N03LB G | Infineon Technologies | MOSFET N-CH 30V 30A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1355pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 52W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
IPB16CN10N G | Infineon Technologies | MOSFET N-CH 100V 53A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 53A · Input Capacitance (Ciss) @ Vds: 3220pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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