Дискретные полупроводники · MOSFET транзисторы (одиночные)

BSP300 E6327 — MOSFET N-CH 800V 190MA SOT-223

Производитель	Infineon Technologies

Серия	SIPMOS®
Rds On (Max) @ Id, Vgs	20 Ohm @ 190mA, 10V
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	190mA
Input Capacitance (Ciss) @ Vds	230pF @ 25V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	1.8W
Mounting Type	Surface Mount
Package / Case	SOT-223 (3 leads + Tab), SC-73, TO-261AA
Встречается под наим.	BSP300E6327T, SP000011111

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	BSP613P	Infineon Technologies	MOSFET P-CH 60V 2.9A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	BSS192PE6327	Infineon Technologies	MOSFET P-CH 250V 190MA SOT-89 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89		Доп. информация Искать в поставщиках
	BSP295E6327T	Infineon Technologies	MOSFET N-CH 60V 1.8A SOT223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 368pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPI35N10	Infineon Technologies	MOSFET N-CH 100V 35A I2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	BSP372 L6327	Infineon Technologies	MOSFET N-CH 100V 1.7A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	BSP320S L6327	Infineon Technologies	MOSFET N-CH 60V 2.9A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	BSS84PW L6327	Infineon Technologies	MOSFET P-CH 60V 150MA SOT-323 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 150mA · Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-323	от 0,00	Доп. информация Искать в поставщиках
	SPD08P06P	Infineon Technologies	MOSFET P-CH 60V 8.83A DPAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.83A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	BSS169 L6327	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.8nC @ 7V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 68pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	от 0,00	Доп. информация Искать в поставщиках
	IPP47N10SL-26	Infineon Technologies	MOSFET N-CH 100V 47A TO220-3 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220-3	от 0,00	Доп. информация Искать в поставщиках
	SPB10N10 G	Infineon Technologies	MOSFET N-CH 100V 10.3A D2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	SPD11N10	Infineon Technologies	MOSFET N-CH 100V 10.5A DPAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	BSP129E6327T	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	BSS123 E7874	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Доп. информация Искать в поставщиках
	SN7002W L6433	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-323 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323	от 0,00	Доп. информация Искать в поставщиках
	SPB21N10	Infineon Technologies	MOSFET N-CH 100V 21A D2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 865pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	BSP88E6327	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 95pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	BSP373 L6327	Infineon Technologies	MOSFET N-CH 100V 1.7A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	BSS192PE6327T	Infineon Technologies	MOSFET P-CH 250V 190MA SOT-89 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89		Доп. информация Искать в поставщиках
	BUZ31 L3045A	Infineon Technologies	MOSFET N-CH 200V 14.5A TO-220 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220		Доп. информация Искать в поставщиках
	SPP70N10L	Infineon Technologies	MOSFET N-CH 100V 70A TO-220 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220		Доп. информация Искать в поставщиках
	BSP298 L6327	Infineon Technologies	MOSFET N-CH 400V 500MA SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	от 0,00	Доп. информация Искать в поставщиках
	BSP149 L6906	Infineon Technologies	MOSFET N-CH 200V 660MA SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Доп. информация Искать в поставщиках
	BSS225	Infineon Technologies	MOSFET N-CH 600V 90MA SOT-89 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90mA · Input Capacitance (Ciss) @ Vds: 131pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89		Доп. информация Искать в поставщиках
	BUZ31 E3046	Infineon Technologies	MOSFET N-CH 200V 14.5A TO-220 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках

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