Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
![]() | BSP315PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 7.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · Input Capacitance (Ciss) @ Vds: 160pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | BSS84PW | Infineon Technologies | MOSFET P-CH 60V 150MA SOT-323 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 150mA · Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 300mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | Доп. информация Искать в поставщиках | |
BSS127 L6327 | Infineon Technologies | MOSFET N-CH 600V 21MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 2.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 21mA · Input Capacitance (Ciss) @ Vds: 28pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | от 0,00 | Доп. информация Искать в поставщиках | |
![]() | BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 368pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | BSP315P-E6327 | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 7.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · Input Capacitance (Ciss) @ Vds: 160pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | |
![]() | BUZ32 E3045A | Infineon Technologies | MOSFET N-CH 200V 9.5A D2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
![]() | BSP316P L6327 | Infineon Technologies | MOSFET P-CH 100V 680MA SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 680mA · Input Capacitance (Ciss) @ Vds: 146pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
BSS138N E6908 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
![]() | BSP324 L6327 | Infineon Technologies | MOSFET N-CH 400V 170MA SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 5.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 154pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 | Доп. информация Искать в поставщиках |
BSS138N E6433 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
BSS119 E7796 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 78pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
BSO613SPV G | Infineon Technologies | MOSFET P-CH 60V 3.44A DSO-8 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.44A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DSO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
BSS126 E6327 | Infineon Technologies | MOSFET N-CH 600V 21MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 2.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 21mA · Input Capacitance (Ciss) @ Vds: 28pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
BSS159N L6327 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 44pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | от 0,00 | Доп. информация Искать в поставщиках | |
SPI70N10L | Infineon Technologies | MOSFET N-CH 100V 70A I2PAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
BSS192E6327 | Infineon Technologies | MOSFET P-CH 240V 150MA SOT-89 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V · Drain to Source Voltage (Vdss): 240V · Current - Continuous Drain (Id) @ 25° C: 150mA · Input Capacitance (Ciss) @ Vds: 130pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | Доп. информация Искать в поставщиках | ||
![]() | SPU30P06P | Infineon Technologies | MOSFET P-CH 60V 30A IPAK Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1535pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | BSP315P L6327 | Infineon Technologies | MOSFET P-CH 60V 1.17A SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 7.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.17A · Input Capacitance (Ciss) @ Vds: 160pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | SPU08P06P | Infineon Technologies | MOSFET P-CH 60V 8.83A TO-251 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.83A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
![]() | BSP89 E6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT-223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Доп. информация Искать в поставщиках | |
![]() | SN7002W E6433 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-323 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | Доп. информация Искать в поставщиках | |
![]() | BSP88 L6327 | Infineon Technologies | MOSFET N-CH 240V 350MA SOT223 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 95pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
BUZ21 | Infineon Technologies | MOSFET N-CH 100V 21A TO-220AB Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
BSS169 E6906 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.8nC @ 7V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 68pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Доп. информация Искать в поставщиках | ||
BUZ30A E3045A | Infineon Technologies | MOSFET N-CH 200V 21A TO-220AB Серия: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: TO-220AB | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |