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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 

IPP06CN10N G — MOSFET N-CH 100V 100A TO-220

ПроизводительInfineon Technologies
Вредные веществаRoHS   Без свинца
СерияOptiMOS™
Rds On (Max) @ Id, Vgs6.5 mOhm @ 100A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs139nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds9200pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max214W
Mounting TypeThrough Hole
Package / CaseTO-220
Встречается под наим.IPP06CN10NGX, IPP06CN10NGXK, SP000096463
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
BSZ088N03MSGBSZ088N03MSGInfineon TechnologiesMOSFET N-CH 30V 40A TSDSON-8
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2100pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSDSON
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BSC123N08NS3 GInfineon TechnologiesMOSFET N-CH 80V 55A TDSON-8
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 1870pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 66W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPD038N04N GInfineon TechnologiesMOSFET N-CH 40V 90A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPB080N06N GIPB080N06N GInfineon TechnologiesMOSFET N-CH 60V 80A TO-263
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 93nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD06N03LB GIPD06N03LB GInfineon TechnologiesMOSFET N-CH 30V 50A TO-252
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSO303SPTInfineon TechnologiesMOSFET P-CH 30V 8.9A 8-SOIC
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.9A  ·  Input Capacitance (Ciss) @ Vds: 1754pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.35W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC
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IPD30N03S4L-14Infineon TechnologiesMOSFET N-CH 30V 30A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 31W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPS06N03LZ GInfineon TechnologiesMOSFET N-CH 25V 50A IPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2653pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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IPP07N03LB GInfineon TechnologiesMOSFET N-CH 30V 50A TO-220
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2782pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB100N06S3-04IPB100N06S3-04Infineon TechnologiesMOSFET N-CH 55V 100A TO-263
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 314nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 14230pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSC032N03SInfineon TechnologiesMOSFET N-CH 30V 50A TDSON-8
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5080pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 78W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPB114N03L GInfineon TechnologiesMOSFET N-CH 30V 30A TO263-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 38W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD80P03P4L-07Infineon TechnologiesMOSFET P-CH 30V 80A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5700pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 88W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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BSC120N03LSGBSC120N03LSGInfineon TechnologiesMOSFET N-CH 30V 39A TDSON-8
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPI024N06N3 GInfineon TechnologiesMOSFET N-CH 60V 120A TO262-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 23000pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPD50N06S2L-13Infineon TechnologiesMOSFET N-CH 55V 50A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 136W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP80N06S2L-H5Infineon TechnologiesMOSFET N-CH 55V 80A TO220-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPS050N03L GIPS050N03L GInfineon TechnologiesMOSFET N-CH 30V 50A TO251-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 68W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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BSA223SPInfineon TechnologiesMOSFET P-CH 20V 390MA SC75
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.62nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 390mA  ·  Input Capacitance (Ciss) @ Vds: 56pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75
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IPB05N03LBIPB05N03LBInfineon TechnologiesMOSFET N-CH 30V 80A D2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3209pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPD034N06N3 GInfineon TechnologiesMOSFET N-CH 60V 100A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 11000pF @ 30V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPA100N08N3 GInfineon TechnologiesMOSFET N-CH 80V 40A TO220-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2410pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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IPP16CN10L GInfineon TechnologiesMOSFET N-CH 100V 54A TO220-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 4190pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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IPP13N03LB GInfineon TechnologiesMOSFET N-CH 30V 30A TO-220
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1355pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 52W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB16CN10N GInfineon TechnologiesMOSFET N-CH 100V 53A TO263-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 53A  ·  Input Capacitance (Ciss) @ Vds: 3220pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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