IRFU1N60A — MOSFET N-CH 600V 1.4A I-PAK
| ||||||||||||||||||||||||||
| Войти Регистрация |
|
||||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI4413CDY-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 30V 8-SOIC Drain to Source Voltage (Vdss): 30V · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| SI7431DP-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 200V 2.2A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 174 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF644NSTRLPBF | Vishay/Siliconix | MOSFET N-CH 250V 14A D2PAK Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRFI734G | Vishay/Siliconix | MOSFET N-CH 450V 3.4A TO220FP Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF730AL | Vishay/Siliconix | MOSFET N-CH 400V 5.5A TO-262 Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI4401BDY-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 40V 8.7A 8-SOIC Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 55nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF634STRL | Vishay/Siliconix | MOSFET N-CH 250V 8.1A D2PAK Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.1A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7463DP-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 40V 11A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 140nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP460NPBF | Vishay/Siliconix | MOSFET N-CH 500V 20A TO-247AC Rds On (Max) @ Id, Vgs: 240 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 124nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3540pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | |
| IRF530STRRPBF | Vishay/Siliconix | MOSFET N-CH 100V 14A D2PAK Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFUC20PBF | Vishay/Siliconix | MOSFET N-CH 600V 2A I-PAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7413DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 8.4A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 51nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI4488DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 3.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.5A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFD310PBF | Vishay/Siliconix | MOSFET N-CH 400V 350MA 4-DIP Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF540SPBF | Vishay/Siliconix | MOSFET N-CH 100V 28A D2PAK Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 72nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFL41N15D | Vishay/Siliconix | MOSFET N-CH 150V 41A D2PAK Drain to Source Voltage (Vdss): 150V · Current - Continuous Drain (Id) @ 25° C: 41A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRC740 | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 66nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRL2203S | Vishay/Siliconix | MOSFET N-CH 30V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 110nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRF740ASTRRPBF | Vishay/Siliconix | MOSFET N-CH 400V 10A D2PAK Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1030pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF730STRLPBF | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFBE20L | Vishay/Siliconix | MOSFET N-CH 800V 1.8A TO-262 Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SIA414DJ-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 8V 12A SC70-6 Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1800pF @ 4V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRLR024TRR | Vishay/Siliconix | MOSFET N-CH 60V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFU4105ZTR | Vishay/Siliconix | MOSFET N-CH 55V 30A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 740pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 48W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF9Z30PBF | Vishay/Siliconix | MOSFET P-CH 50V 18A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 900pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
