Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRLI2910 — MOSFET N-CH 100V 31A TO220FP

Производитель	International Rectifier

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	26 mOhm @ 16A, 10V
Drain to Source Voltage (Vdss)	100V
Gate Charge (Qg) @ Vgs	140nC @ 5V
Current - Continuous Drain (Id) @ 25° C	31A
Input Capacitance (Ciss) @ Vds	3700pF @ 25V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	63W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Встречается под наим.	*IRLI2910

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRF5803	International Rectifier	MOSFET P-CH 40V 3.4A 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP		Доп. информация Искать в поставщиках
	IRLR3410TRL	International Rectifier	MOSFET N-CH 100V 17A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 34nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRL3705NSTRRPBF	International Rectifier	MOSFET N-CH 55V 89A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 98nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 89A · Input Capacitance (Ciss) @ Vds: 3600pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF7811WPBF	International Rectifier	MOSFET N-CH 30V 14A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2335pF @ 16V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRLU3714PBF	International Rectifier	MOSFET N-CH 20V 36A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.7nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 36A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF3707	International Rectifier	MOSFET N-CH 30V 62A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 1990pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 87W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRL3715TRL	International Rectifier	MOSFET N-CH 20V 54A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 1060pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRFIZ24NPBF	International Rectifier	MOSFET N-CH 55V 14A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 29W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLU8721PBF	International Rectifier	MOSFET N-CH 30V 65A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 1030pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLU3105PBF	International Rectifier	MOSFET N-CH 55V 25A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 37 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 710pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 57W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL3803L	International Rectifier	MOSFET N-CH 30V 140A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 140nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF9Z24NL	International Rectifier	MOSFET P-CH 55V 12A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF7811	International Rectifier	MOSFET N-CH 28V 14A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 28V · Gate Charge (Qg) @ Vgs: 23nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1800pF @ 16V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRFR4620TRLPBF	International Rectifier	MOSFET N-CH 200V 24A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1710pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 144W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFU3704	International Rectifier	MOSFET N-CH 20V 75A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 19nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 1996pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRLML2502TR	International Rectifier	MOSFET N-CH 20V 4.2A SOT-23 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 740pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	от 0,00	Доп. информация Искать в поставщиках
	IRLU3915PBF	International Rectifier	MOSFET N-CH 55V 30A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 92nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 120W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFS17N20DPBF	International Rectifier	MOSFET N-CH 200V 16A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFSL23N15DPBF	International Rectifier	MOSFET N-CH 150V 23A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFU2905Z	International Rectifier	MOSFET N-CH 55V 42A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 1380pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRFR024NPBF	International Rectifier	MOSFET N-CH 55V 17A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR3704ZCPBF	International Rectifier	MOSFET N-CH 20V 60A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 1190pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 48W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF9520NSPBF	International Rectifier	MOSFET P-CH 100V 6.8A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.8A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFB3507	International Rectifier	MOSFET N-CH 75V 97A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 97A · Input Capacitance (Ciss) @ Vds: 3540pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF7828TRPBF	International Rectifier	MOSFET N-CH 30V 13.6A SO-8 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 13.6A · Input Capacitance (Ciss) @ Vds: 1010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8	от 0,00	Доп. информация Искать в поставщиках

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