Дискретные полупроводники · MOSFET транзисторы (одиночные)

SPB77N06S2-12 — MOSFET N-CH 55V 80A D2PAK

Производитель	Infineon Technologies

Серия	OptiMOS™
Rds On (Max) @ Id, Vgs	12 mOhm @ 38A, 10V
Drain to Source Voltage (Vdss)	55V
Gate Charge (Qg) @ Vgs	60nC @ 10V
Current - Continuous Drain (Id) @ 25° C	80A
Input Capacitance (Ciss) @ Vds	2350pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	158W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Встречается под наим.	SP000013587, SPB77N06S212T

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	SPB80N03S2L-06 G	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2530pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IPB019N06L3 G	Infineon Technologies	MOSFET N-CH 60V 120A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 166nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 28000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	SPD30N03S2L10T	Infineon Technologies	MOSFET N-CH 30V 30A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 41.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	BSC889N03LS G	Infineon Technologies	MOSFET N-CH 30V 45A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00	Доп. информация Искать в поставщиках
	BSC119N03S G	Infineon Technologies	MOSFET N-CH 30V 30A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1370pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 43W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPD035N06L3 G	Infineon Technologies	MOSFET N-CH 60V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 79nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 13000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IPB04N03LB	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5203pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 107W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	BSS209PW L6327	Infineon Technologies	MOSFET P-CH 20V 580MA SOT-323 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 580mA · Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 520mW · Mounting Type: Surface Mount · Package / Case: SOT-323	от 0,00	Доп. информация Искать в поставщиках
	BSC123N08NS3 G	Infineon Technologies	MOSFET N-CH 80V 55A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 1870pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00	Доп. информация Искать в поставщиках
	IPD15N06S2L-64	Infineon Technologies	MOSFET N-CH 55V 19A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 354pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IPP041N04N G	Infineon Technologies	MOSFET N-CH 40V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4500pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	BSO4410	Infineon Technologies	MOSFET N-CH 30V 11.1A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.1A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPI086N10N3 G	Infineon Technologies	MOSFET N-CH 100V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3980pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	BSC123N10LS G	Infineon Technologies	MOSFET N-CH 100V 71A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 71A · Input Capacitance (Ciss) @ Vds: 4900pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 114W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00	Доп. информация Искать в поставщиках
	IPB080N06N G	Infineon Technologies	MOSFET N-CH 60V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 93nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3500pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP100N10S3-05	Infineon Technologies	MOSFET N-CH 100V 100A T0220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220-3	от 0,00	Доп. информация Искать в поставщиках
	IPP45N06S3-16	Infineon Technologies	MOSFET N-CH 55V 45A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP080N03L G	Infineon Technologies	MOSFET N-CH 30V 50A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1900pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPP80N06S2L-H5	Infineon Technologies	MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	BSS214NW L6327	Infineon Technologies	MOSFET N-CH 20V 1.5A SOT-323 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 143pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323	от 0,00	Доп. информация Искать в поставщиках
	IPD70N10S3L-12	Infineon Technologies	MOSFET N-CH 100V 70A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 77nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 5550pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	BSC110N06NS3 G	Infineon Technologies	MOSFET N-CH 60V 50A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2700pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00	Доп. информация Искать в поставщиках
	IPDH4N03LAG	Infineon Technologies	MOSFET N-CH 25V 90A TO252-3-11 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 26nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 3200pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPP072N10N3 G	Infineon Technologies	MOSFET N-CH 100V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4910pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPB70N04S3-07	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках

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