IPP072N10N3 G — MOSFET N-CH 100V 80A TO220-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SPB80N03S2L-06 G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2530pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IPP80N06S2L-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2620pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC889N03LS G | Infineon Technologies | MOSFET N-CH 30V 45A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSS209PW L6327 | Infineon Technologies | MOSFET P-CH 20V 580MA SOT-323 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.38nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 580mA · Input Capacitance (Ciss) @ Vds: 89.9pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 520mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPB14N03LAT | Infineon Technologies | MOSFET N-CH 25V 30A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 8.3nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1043pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 46W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
 | IPP04N03LA | Infineon Technologies | MOSFET N-CH 25V 80A TO-220AB Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3877pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 107W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPP04CN10NG | Infineon Technologies | MOSFET N-CH 100V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 13800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD088N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3900pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSZ050N03LSG | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2800pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| BSC265N10LSF G | Infineon Technologies | MOSFET N-CH 100V 40A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1600pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 78W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB03N03LA G | Infineon Technologies | MOSFET N-CH 25V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 57nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7027pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD036N04L G | Infineon Technologies | MOSFET N-CH 40V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 6300pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSR802N L6327 | Infineon Technologies | MOSFET N-CH 20V 3.7A SC-59 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 2.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.7nC @ 2.5V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 1447pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-59 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPP147N03L G | Infineon Technologies | MOSFET N-CH 30V 20A TO-220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1000pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD035N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 79nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 13000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP041N04N G | Infineon Technologies | MOSFET N-CH 40V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4500pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSC079N03SG | Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2230pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP06CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 139nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9200pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP80N06S2-08 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 96nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 2860pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 215W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPB100N08S2-07 | Infineon Technologies | MOSFET N-CH 75V 100A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 66A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 6020pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IPD30N03S2L-07 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP80N04S2L-03 | Infineon Technologies | MOSFET N-CH 40V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 213nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7930pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
 | BSZ105N04NSG | Infineon Technologies | MOSFET N-CH 40V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1300pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP037N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 79nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 13000pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 167W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSS306N L6327 | Infineon Technologies | MOSFET N-CH 30V 2.3A SOT-23 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2.3A · Input Capacitance (Ciss) @ Vds: 275pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | от 0,00 | Доп. информация Искать в поставщиках |
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