Дискретные полупроводники · MOSFET транзисторы (одиночные)

STB19NF20 — MOSFET N-CH 200V 15A D2PAK

Производитель	STMicroelectronics
Вредные вещества	RoHS Без свинца

Серия	MDmesh™
Rds On (Max) @ Id, Vgs	160 mOhm @ 7.5A, 10V
Drain to Source Voltage (Vdss)	200V
Gate Charge (Qg) @ Vgs	24nC @ 10V
Current - Continuous Drain (Id) @ 25° C	15A
Input Capacitance (Ciss) @ Vds	800pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	90W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Встречается под наим.	497-7941-2, STB19NF20-ND

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	STB15NM65N	STMicroelectronics	MOSFET N-CH 650V 15.5A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15.5A · Input Capacitance (Ciss) @ Vds: 1900pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STF6NM60N	STMicroelectronics	MOSFET N-CH 600V 4.6A TO-220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 920 mOhm @ 2.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.6A · Input Capacitance (Ciss) @ Vds: 420pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Through Hole · Package / Case: TO-220FP	от 0,00	Доп. информация Искать в поставщиках
	STW30NM60D	STMicroelectronics	MOSFET N-CH 600V 30A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 145 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2520pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 312W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF13NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 960pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD8NM60N-1	STMicroelectronics	MOSFET N-CH 600V 7A IPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 560pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 70W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Доп. информация Искать в поставщиках
	STW25NM50N	STMicroelectronics	MOSFET N-CH 500V 22A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 2565pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STE70NM60	STMicroelectronics	MOSFET N-CH 600V 70A ISOTOP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 55 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 266nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 7300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 600W · Mounting Type: Chassis Mount · Package / Case: ISOTOP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1200pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1250pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 940pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	STP11NM60FP	STMicroelectronics	MOSFET N-CH 650V 11A TO220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD7NM80-1	STMicroelectronics	MOSFET N-CH 800V 6.5A IPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	STB30NM50N	STMicroelectronics	MOSFET N-CH 500V 27A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 94nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 2740pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB18NM80	STMicroelectronics	MOSFET N-CH 800V 17A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 2070pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STF12NM50N	STMicroelectronics	MOSFET N-CH 500V 11A TO220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 940pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD7NM50N	STMicroelectronics	MOSFET N-CH 500V 5A DPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 400pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB24NM65N	STMicroelectronics	MOSFET N-CH 650V 19A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 2500pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 160W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-220-2 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STI16NM50N	STMicroelectronics	MOSFET N-CH 500V 15A I2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1200pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Доп. информация Искать в поставщиках
	STW20NM50	STMicroelectronics	MOSFET N-CH 550V 20A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 550V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STB25NM60N	STMicroelectronics	MOSFET N-CH 600V 21A D2PAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 84nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 2400pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 160W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP20NM60FP	STMicroelectronics	MOSFET N-CH 600V 20A TO220FP Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STW26NM60N	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1800pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: TO-247-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STD16N65M5	STMicroelectronics	MOSFET N-CH 650V 12A DPAK Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 299 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 650V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1250pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	STP11NM60A	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 Серия: MDmesh™ · Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1211pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках

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