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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
STD8NM60N-1

STD8NM60N-1 — MOSFET N-CH 600V 7A IPAK

ПроизводительSTMicroelectronics
Вредные веществаRoHS   Без свинца
СерияMDmesh™
Rds On (Max) @ Id, Vgs650 mOhm @ 3.5A, 10V
Drain to Source Voltage (Vdss)600V
Gate Charge (Qg) @ Vgs19nC @ 10V
Current - Continuous Drain (Id) @ 25° C7A
Input Capacitance (Ciss) @ Vds560pF @ 50V
FET PolarityN-Channel
FET FeatureStandard
Power - Max70W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
STI15NM60NSTI15NM60NSTMicroelectronicsMOSFET N-CH 600V 14A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STF21NM50NSTF21NM50NSTMicroelectronicsMOSFET N-CH 500V 18A TO220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STP19NM65NSTP19NM65NSTMicroelectronicsMOSFET N-CH 650V 15.5A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 7.75A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15.5A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STF10NM65NSTF10NM65NSTMicroelectronicsMOSFET N-CH 650V 9A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STB13NM50NSTB13NM50NSTMicroelectronicsMOSFET N-CH 500V 12A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STW20NM65NSTMicroelectronicsMOSFET N-CH 650V 19A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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STP10NM65NSTP10NM65NSTMicroelectronicsMOSFET N-CH 650V 9A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 850pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD3NM60-1STMicroelectronicsMOSFET N-CH 600V 3A IPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 324pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STF23NM60NSTF23NM60NSTMicroelectronicsMOSFET N-CH 600V 19A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STB21NM60N-1STB21NM60N-1STMicroelectronicsMOSFET N-CH 600V 17A I2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 140W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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STP12NM60NSTP12NM60NSTMicroelectronicsMOSFET N-CH 600V 10A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 410 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 30.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 960pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 90W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP7NM50NSTP7NM50NSTMicroelectronicsMOSFET N-CH 500V 5A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STP23NM60NSTP23NM60NSTMicroelectronicsMOSFET N-CH 600V 19A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 2050pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STW30NM50NSTW30NM50NSTMicroelectronicsMOSFET N-CH 500V 27A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 94nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 27A  ·  Input Capacitance (Ciss) @ Vds: 2740pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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STP30NM30NSTP30NM30NSTMicroelectronicsMOSFET N-CH 300V 30A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 160W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STD7NM50N-1STD7NM50N-1STMicroelectronicsMOSFET N-CH 500V 5A IPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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STF7NM80STMicroelectronicsMOSFET N-CH 800V 6.5A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.25A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220FP
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STD8NM60NSTD8NM60NSTMicroelectronicsMOSFET N-CH 600V 7A DPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 70W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STW14NM50STW14NM50STMicroelectronicsMOSFET N-CH 550V 14A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 175W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STB8NM60DSTB8NM60DSTMicroelectronicsMOSFET N-CH 600V 8A D2PAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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STP18NM80STMicroelectronicsMOSFET N-CH 800V 17A TO-220
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 295 mOhm @ 8.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 2070pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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STW43NM50NSTW43NM50NSTMicroelectronicsMOSFET N-CH 500V 37A TO-247
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 255W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3
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STD12NM50NSTD12NM50NSTMicroelectronicsMOSFET N-CH 500V 11A DPAK
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 940pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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STF11NM80STF11NM80STMicroelectronicsMOSFET N-CH 800V 11A TO220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 43.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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STF7NM50NSTF7NM50NSTMicroelectronicsMOSFET N-CH 500V 5A TO-220FP
Серия: MDmesh™  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads)
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