Войти Регистрация |
|
Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
2SK1381(F) | Toshiba | MOSFET N-CH 100V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 32 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 88nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2993(SM,Q) | Toshiba | MOSFET N-CH 250V 20A TO-220 Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2746 | Toshiba | MOSFET N-CH 800V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK3907(Q) | Toshiba | MOSFET N-CH 500V 23A SC-65 Rds On (Max) @ Id, Vgs: 230 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2610(F,T) | Toshiba | MOSFET N-CH 900V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
TK6A60D(STA4,Q,M) | Toshiba | MOSFET N-CH 600V 6A TO-220F Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TPCF8104(TE85L) | Toshiba | MOSFET P-CH 30V 6A VS-8 Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1760pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | Доп. информация Искать в поставщиках | ||
TPC8017-H(TE12LQM) | Toshiba | MOSFET N-CH 30V 15A 8-SOP Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1465pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TPC8014(TE12L,Q,M) | Toshiba | MOSFET N-CH 30V 11A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 14 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3935(Q,M) | Toshiba | MOSFET N-CH 450V 17A SC-67 Rds On (Max) @ Id, Vgs: 250 mOhm @ 8.5A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 3100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
TK12X60U(TE24L,Q) | Toshiba | MOSFET N-CH 600V 12A TFP Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 144W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
TPC6107(TE85L,F,M) | Toshiba | MOSFET P-CH 20V 4.5A VS6 2-3T1A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 680pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 2-3T1A | от 0,00 | Доп. информация Искать в поставщиках | |
TPC8032-H(TE12LQM) | Toshiba | MOSFET N-CH 30V 15A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 2846pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2266(TE24R,Q) | Toshiba | MOSFET N-CH 60V 45A 2-10S2B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK1930(TE24L,Q) | Toshiba | MOSFET N-CH 1000V 4A TO-220 Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
2SJ360(F) | Toshiba | MOSFET P-CH 60V 1A SC-62 Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 155pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2841(F) | Toshiba | MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2917(F) | Toshiba | MOSFET N-CH 500V 18A 2-16F1B Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 3720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: 2-16F1B | от 0,00 | Доп. информация Искать в поставщиках | |
TK12D60U(Q) | Toshiba | MOSFET N-CH 600V 12A 2-10V1A Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 144W · Mounting Type: Through Hole · Package / Case: 2-10V1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TPC8017-H(TE12L) | Toshiba | MOSFET N-CH 30V 15A 8-SOP Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1465pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | ||
2SK2789(TE24L) | Toshiba | MOSFET N-CH 100V 27A TO-220FL Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220FL | Доп. информация Искать в поставщиках | ||
2SK2551 | Toshiba | MOSFET N-CH 50V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK3017 | Toshiba | MOSFET N-CH 900V 8.5A 2-16F1B Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 2150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: 2-16F1B | Доп. информация Искать в поставщиках | ||
2SK3879(TE24L,Q) | Toshiba | MOSFET N-CH 800V 6.5A TO-220 Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2989(F) | Toshiba | MOSFET N-CH 50V 5A TO-92 Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 6.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 145pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole | от 0,00 | Доп. информация Искать в поставщиках |
© 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |