SMBTA63, SMBTA64
1
Nov-30-2001
PNP Silicon Darlington Transistors
High collector current
High DC current gain
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
SMBTA63
SMBTA64
s2U
s2V
1 = B
1 = B
2 = E
2 = E
3 = C
3 = C
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CES
30
V
Collector-base voltage
V
CBO
30
Emitter-base voltage
V
EBO
10
DC collector current
I
C
500
mA
Peak collector current
I
CM
800
A
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 81 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
210
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
SMBTA63, SMBTA64
2
Nov-30-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 A, V
BE
= 0
V
(BR)CES
30
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
30
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
10
-
-
Collector cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
10
A
Emitter cutoff current
V
EB
= 10 V, I
C
= 0
I
EBO
-
-
100
nA
DC current gain 1)
I
C
= 10 mA, V
CE
= 5 V
I
C
= 100 mA, V
CE
= 5 V
SMBTA63
SMBTA64
SMBTA63
SMBTA64
h
FE
5000
10000
10000
20000
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 100 mA, I
B
= 0.1 mA
V
CEsat
-
-
1.5
V
Base-emitter saturation voltage 1)
I
C
= 100 mA, I
B
= 0.1 mA
V
BEsat
-
-
2
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 20 MHz
f
T
125
-
-
MHz
1) Pulse test: t
300
s, D = 2%
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