1
Motorola Bipolar Power Transistor Device Data
Complementary Plastic Silicon
Power Transistors
. . . designed for lower power audio amplifier and low current, highspeed switching
applications.
Low CollectorEmitter Sustaining Voltage --
VCEO(sus) 60 Vdc (Min) -- BD787, BD788
High CurrentGain -- Bandwidth Product --
fT = 50 MHz (Min) @ IC = 100 mAdc
CollectorEmitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc
MAXIMUM RATINGS
Rating
Symbol
BD787
BD788
Unit
CollectorEmitter Voltage
VCEO
60
Vdc
CollectorBase Voltage
VCBO
80
Vdc
EmitterBase Voltage
VEBO
6.0
Vdc
Collector Current -- Continous
-- Peak
IC
4.0
8.0
Adc
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25
C
Derate Above 25
_
C
PD
15
0.12
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
8.34
_
C/W
16
12
0
20
40
60
100
120
140
160
Figure 1. Power Derating
T, TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
80
4.0
8.0
1.6
1.2
0
0.4
0.8
P
D
, POWER DISSIP
A
TION (W
A
TTS)
TA
T C
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD787/D
Motorola, Inc. 1995
BD787
BD788
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 VOLTS
15 WATTS
CASE 7708
TO225AA TYPE
NPN
PNP
REV 7
BD787 BD788
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
60
--
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
ICEO
--
100
Adc
Collector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125
C)
ICEX
--
--
1.0
0.1
Adc
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
--
1.0
Adc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
40
25
20
5.0
250
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 4.0 Adc, IB = 800 mAdc)
VCE(sat)
--
--
--
--
0.4
0.6
0.8
2.5
Vdc
BaseEmitter Saturation Voltage
(IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
--
2.0
Vdc
BaseEmitter On Voltage
(IC = 2.0 Adc, VCE = 3.0 Vdc)
VBE(on)
--
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
50
--
MHz
Output Capacitance
(VCB = 10 Vdc, IC = 0)
BD787
(f = 0.1 MHz)
BD788
Cob
--
--
50
70
pF
SmallSignal Current Gain
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
10
--
--
* Indicates JEDEC Registered Data
(1) Pulse Test; Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 2. Switching Time Test Circuit
500
0.04
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME (ns)
70
30
20
5.0
0.06
0.2
0.4
0.6
td @ VBE(off) = 5.0 V
VCC = 30 V
IC/IB = 10
TJ = 25
C
+ 11 V
0
+ 30 V
SCOPE
RB
4 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
RC
tr
7.0
10
1.0
4.0
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
25
s
9.0 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
BD787 (NPN)
BD788 (PNP)
300
200
100
50
0.1
2.0
BD787 BD788
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
R
JC(t) = r(t) R
JC
R
JC = 8.34
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0 (SINGLE PULSE)
0.2
0.05
0.1
0.02
0.01
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
Figure 5. Active Region Safe Operating Area
10
1.0
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
2.0
5.0
10
50
100
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.05
0.02
I C
, COLLECT
OR CURRENT
(AMP)
BD787 (NPN) BD788 (PNP)
20
CURVES APPLY BELOW RATED VCEO
TJ = 150
C
dc
5.0 ms
1.0 ms
500
s
100
s
1.0
0.1
30
70
60 V
3.0
7.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C: TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C, TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.04
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME (ns)
0.06
0.1
0.2
0.6
1.0
2.0
4.0
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
ts
0.4
tf
(NPN)
(PNP)
2000
20
700
100
200
1000
500
300
30
50
70
200
1.0
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
10
2.0 3.0
5.0 7.0
20
30
100
10
C, CAP
ACIT
ANCE (pF)
100
70
50
30
TJ = 25
C
Cib
Cob
(NPN)
(PNP)
20
50
70
BD787 BD788
4
Motorola Bipolar Power Transistor Device Data
400
0.04
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
2.0
100
50
30
300
70
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
200
20
4.0
NPN
BD787
NPN
BD788
VCE = 1.0 V
VCE = 3.0 V
0.06
200
0.04
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
2.0
50
20
100
30
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
70
10
4.0
VCE = 1.0 V
VCE = 3.0 V
0.06
2.0
0.04
IC, COLLECTOR CURRENT (AMP)
0.2
0.6
2.0
4.0
0.8
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
Figure 9. "On" Voltages
0.1
1.0
0.4
1.6
1.2
VBE(on) @ VCE = 3.0 V
2.0
IC, COLLECTOR CURRENT (AMP)
0.8
0.4
0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V
, VOL
T
AGE (VOL
TS)
1.6
1.2
VBE @ VCE = 3.0 V
0.06
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
+ 2.5
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
VB FOR VBE
*
VC FOR VCE(sat)
*APPLIES FOR IC/IB
hFE/3
+ 1.0
25
C to 150
C
55
C to 25
C
25
C to 150
C
55
C to 25
C
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
+ 2.5
IC, COLLECTOR CURRENT (AMP)
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
VB FOR VBE
*
VC FOR VCE(sat)
*APPLIES FOR IC/IB
hFE/3
+ 1.0
25
C to 150
C
55
C to 25
C
25
C to 150
C
55
C to 25
C
0.04
0.2
0.6
2.0
4.0
0.1
1.0
0.4
0.06
BD787 BD788
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
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