Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 22nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 5A  •  Input Capacitance (Ciss) @ Vds: 630pF @ 10V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.3W  •  Mounting Type: Through Hole