Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 900V  •  Gate Charge (Qg) @ Vgs: 12nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 2.5A  •  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 62W  •  Mounting Type: Through Hole  •  Package / Case: TO-220AB  •  Встречается под наим.: 2SK3762M