Производитель: International Rectifier  •  Вредные вещества: RoHS   Без свинца  •  Серия: HEXFET®  •  Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 9.3nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 11A  •  Input Capacitance (Ciss) @ Vds: 760pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 2.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC