Производитель: ON Semiconductor  •  Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.9A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 32nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 6.9A  •  Input Capacitance (Ciss) @ Vds: 3200pF @ 10V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.38W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Встречается под наим.: NTMS4101PR2OS