Производитель: NXP Semiconductors  •  Вредные вещества: RoHS   Без свинца  •  Серия: TrenchMOS™  •  Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 16.7nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 75A  •  Input Capacitance (Ciss) @ Vds: 1620pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 136W  •  Mounting Type: Surface Mount  •  Package / Case: DPak, TO-252 (2 leads+tab), SC-63  •  Встречается под наим.: PHD82NQ03LT /T3, PHD82NQ03LT /T3-ND