Производитель: Vishay/Siliconix  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 140nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 11A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.9W  •  Mounting Type: Surface Mount  •  Package / Case: PowerPAK® SO-8  •  Встречается под наим.: SI7463DP-T1-GE3CT