Производитель: Infineon Technologies  •  Серия: CoolMOS™  •  Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V  •  Drain to Source Voltage (Vdss): 650V  •  Gate Charge (Qg) @ Vgs: 12.5nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.8A  •  Input Capacitance (Ciss) @ Vds: 200pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 25W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Встречается под наим.: SPB02N60C3INCT