Производитель: Toshiba  •  Вредные вещества: RoHS   Без свинца  •  Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 1.2nC @ 4V  •  Current - Continuous Drain (Id) @ 25° C: 330mA  •  Input Capacitance (Ciss) @ Vds: 43pF @ 10V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 150mW  •  Mounting Type: Surface Mount