Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 25.4nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 7A  •  Input Capacitance (Ciss) @ Vds: 1270pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 700mW  •  Mounting Type: Surface Mount  •  Package / Case: VS-8 (2-3U1A)  •  Встречается под наим.: TPCF8001TR