Производитель: Toshiba  •  Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 28nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 6A  •  Input Capacitance (Ciss) @ Vds: 1050pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 74W  •  Mounting Type: Through Hole  •  Package / Case: TO-220AB  •  Встречается под наим.: 2SK3761M