Производитель: Infineon Technologies  •  Вредные вещества: RoHS   Без свинца  •  Серия: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 17nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.8A  •  Input Capacitance (Ciss) @ Vds: 368pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Встречается под наим.: BSP295XTINTR, SP000011105