Характеристики | Производитель: Infineon Technologies • Вредные вещества: RoHS Без свинца • Серия: SIPMOS® • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V • Drain to Source Voltage (Vdss): 60V • Gate Charge (Qg) @ Vgs: 17nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 1.8A • Input Capacitance (Ciss) @ Vds: 368pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1.8W • Mounting Type: Surface Mount • Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA • Встречается под наим.: BSP295XTINTR, SP000011105 |