Характеристики | ![Скрыть](/static/search/close.gif) ![](/static/photo/mini/infineon/6257.gif) Производитель: Infineon Technologies • Серия: SIPMOS® • Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V • Drain to Source Voltage (Vdss): 240V • Gate Charge (Qg) @ Vgs: 6.4nC @ 10V • Current - Continuous Drain (Id) @ 25° C: 350mA • Input Capacitance (Ciss) @ Vds: 140pF @ 25V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 1.8W • Mounting Type: Surface Mount • Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA • Встречается под наим.: BSP89E6327T, SP000011160 |