Производитель: Renesas Technology America  •  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 45A  •  Input Capacitance (Ciss) @ Vds: 4400pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 25W  •  Mounting Type: Surface Mount  •  Package / Case: LFPAK