Характеристики | ![Скрыть](/static/search/close.gif) Производитель: Infineon Technologies • Вредные вещества: RoHS Без свинца • Серия: OptiMOS™ • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V • Drain to Source Voltage (Vdss): 30V • Gate Charge (Qg) @ Vgs: 40nC @ 5V • Current - Continuous Drain (Id) @ 25° C: 90A • Input Capacitance (Ciss) @ Vds: 5200pF @ 15V • FET Polarity: N-Channel • FET Feature: Logic Level Gate • Power - Max: 115W • Mounting Type: Through Hole • Package / Case: IPak, TO-251, DPak (3 straight short leads + tab) • Встречается под наим.: IPS03N03LBGX, SP000220141 |