Производитель: Infineon Technologies  •  Вредные вещества: RoHS   Без свинца  •  Серия: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 40nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 90A  •  Input Capacitance (Ciss) @ Vds: 5200pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 115W  •  Mounting Type: Through Hole  •  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)  •  Встречается под наим.: IPS03N03LBGX, SP000220141